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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3298 2SC3298A 2SC3298B
DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
Absolute maximum ratings (Ta=25ae )
SYMBOL

PARAMETER
VCBO
INC
Collector-base voltage
E SEM ANG H
2SC3298 2SC3298A 2SC3298B 2SC3298 2SC3298A 2SC3298B
OND IC
CONDITIONS
TOR UC
VALUE 160 180 200 160
UNIT
Open emitter
V
VCEO
Collector-emitter voltage
Open base
180 200
V
VEBO IC IB PC Tj Tstg
Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature
Open collector
5 1.5 0.15
V A A W ae ae
TC=25ae
20 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SC3298 V(BR)CEO Collector-emitter breakdown voltage 2SC3298A 2SC3298B VCEsat VBE ICBO IEBO hFE Cob fT Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance
2SC3298 2SC3298A 2SC3298B
SYMBOL
CONDITIONS
MIN 160
TYP.
MAX
UNIT
IC=10mA , IB=0
180 200
V
IC=0.5A, IB=50mA IC=0.5A ,VCE=5V VCB=160V, IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 70
1.5 1.0 1.0 1.0 |I |I
V V A A
Transition frequency

hFE Classifications O 70-140 Y
CHA IN
120-240
E SEM NG
OND IC
TOR UC
25 100
240
pF MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3298 2SC3298A 2SC3298B

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3

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